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Silicon MOSFETs (Small Signal)
2SK0601 (2SK601)
Silicon N-channel MOSFET
For switching I Features
* Low on-resistance RDS(on) * High-speed switching * Allowing to be driven directly by CMOS and TTL * Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
1.0+0.1 -0.2
1 0.40.08 1.50.1 3 3 2 0.50.08 4.50.1 1.60.2 1.50.1
Unit: mm
4.0+0.25 -0.20
2.50.1 3
0.40.04
I Absolute Maximum Ratings Ta = 25C
Parameter Drain to source voltage Gate to source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature
*
45
3.00.15
Symbol VDS VGSO ID IDP PD Tch Tstg
Rating 80 20 0.5 1 1 150 -55 to +150
Unit V V A A W C C
1: Gate 2: Drain 3: Source MiniP3-F1 Package
Marking Symbol: O
Note) *: PC board: Copper foil of the drain portion should have a area of 1 cm2 or more and the board thickness should be 1.7 mm.
I Electrical Characteristics Ta = 25C
Parameter Drain to source cut-off current Gate to source leakage current Drain to source breakdown voltage Gate threshold voltage Drain to source on-resistance *1 Forward transfer admittance Input capacitance (common source) Output capacitance (common source) Reverse transfer capacitance (common source) Turn-on time *2 Turn-off time
*2
Symbol IDSS IGSS VDSS Vth RDS(on) Yfs Ciss Coss Crss ton toff
Conditions VDS = 60 V, VGS = 0 VGS = 20 V, VDS = 0 IDS = 100 A, VGS = 0 ID = 1 mA, VDS = VGS ID = 0.5 A, VGS = 10 V ID = 0.2 A, VDS = 15 V, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 MHz
Min
Typ
Max 10 0.1
Unit A A V V mS pF pF pF ns ns
80 1.5 2 300 45 30 8 15 20 3.5 4
Note) *1: Pulse measurement *2: ton , toff measurement circuit
Vout Vin = 10 V t = 1 S f = 1 MHz 50 68 VDD = 30 V Vin Vout 10% Vin 10% 90%
90% V out
ton
toff
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2002 SJF00018BED
0.4 max.
2.60.1
1
2SK0601
PD Ta
1.6
1.2
ID VDS
Ta = 25C VGS = 5.5 V
ID VGS
1.2 VDS = 10 V Ta = 25C 1.0
Allowable power dissipation PD (W)
1.4 1.2
Copper foil of the drain portion should have a area of 1 cm2 or more and the board thickness should be 1.7 mm.
1.0
Drain current ID (A)
0.8
5V
Drain current ID (A)
0.8
1.0 0.8 0.6 0.4
0.6
4.5 V
0.6
0.4
4V
0.4
3.5 V 0.2
0.2
3V
0.2 0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8
0
10
0
2
4
6
8
10
Ambient temperature Ta (C)
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
Input capacitance (common source), output capacitance (common source), reverse transfer capacitance (common source) Ciss , Coss , Crss (pF)
Yfs VGS
600
Ciss , Coss , Crss VDS
120
RDS(on) VGS
6 ID = 500 mA
500
100
Drain to source on-resistance RDS(on) ()
Forward transfer admittance Yfs (mS)
VDS = 15 V f = 1 kHz Ta = 25C
VGS = 0 f = 1 MHz Ta = 25C
5
400
80
4
300
60
3 Ta = 75C 25C 1 -25C
200
40
Ciss
2
100
20 Coss 0 1 3 10 30 Crss 100 300 1 000
0 0 1 2 3 4 5 6
0 0 4 8 12 16 20
Gate to source voltage VGS (V)
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
RDS(on) Ta
6
Drain to source on-resistance RDS(on) ()
ID = 500 mA
5
4 VGS = 5 V
3
10 V 2
1
0 -50
-25
0
25
50
75
Ambient temperature Ta (C)
2
SJF00018BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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